Prof. Dr. Peter Vogl

 
Room: S205
Category: Scientific Staff
Phone: 11550
Email: Vogl(at)wsi.tum.de

PERSONAL DATA

 

Birth:
3/19/1949; Graz, Austria
Marital Status:
Married, one daughter and one son
Citizenship:
Austrian
Scientific Societies:
German Physical Society,Austrian Physical Society,
American Physical Society,
Corresponding Member of the International Center for Theoretical Physics in Triest (Italy)
Honors:
Fulbright travel grant for research in the US, 1977
Max-Kade grant for research in the US, 1986
Fellowship of Japan Society for the Promotion of Science, Japan, 1996
Education
Habilitation in theoretical physics, March 1980, University of Graz
PhD in Physics, Nov. 1974 University of Graz, Graz, Austria
Study of theoretical physics and mathematics at the University of Graz, 1968-1974
Gymnasium Bruck/Mur, Austria, 1959-1967

FIELD OF SPECIALIZATION
Theoretical Solid State Physics
PROFESSIONAL EXPERIENCE
2000-2003: Vice Dean of faculty of physics, Technische Universität München
1998-1999: Dean of faculty of physics, Technische Universität München
Since 1990: Chairman and member of  several committees at Technische Universität München (faculty of physics board, full professor search committees, examiners' board, board for curriculum reform, board for international affairs, board for teacher's education)
 
Conference organizations:      Coorganizer MSS-6 in Garmisch-Partenkirchen, 1993,
                                            Program Chairman HCIS-10 Berlin, 1997,
                                            Several workshops
 
Scientific services: Referee for Physical Review, Physical Review Letters, Journal of Applied Physics, Applied Physics Letters, Solid State Communications, J. Physics and others.
 
Scientific Activities
 
Electronic structure and charge carrier transport in semiconductors, mesoscopic systems, magnetic materials and conducting polymers.
 
Publications: approx. 150 reviewed papers
Citation Classics: Theory of deep impurities 1980, Tight binding model of semiconductors 1983
EMPLOYMENT
93-present: Full Professor (Ordinarius f. Theoretische Physik), Walter Schottky Institut and Physik Department der Techn. Univ. München, T 33, D-85748 Garching, Germany.
90-93: Associate Professor (außerord. Universitätsprofessor, C3), Physik Department der Techn. Univ. München, T 30, D-85748 Garching, Germany. 
80-90: Assistant Professor (Assistenz­professor), Institute for Theoretical Physics,University of Graz, A-8010, Austria.
86-87. Visiting scientist (collaborator), Center for Nonlinear Studies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
81-83.Visiting staff member, Max-Planck-Institute for Solid State Research, D-7000 Stuttgart 80, Germany.
75-80.Assistant Professor (Universitätsassistent), Institute for Theoretical Physics,University of Graz, A-8010 Austria.
77-79.Research Associate, University of Illinois,Dept. of Physics,Urbana,IL 60801,USA.
71-75.Teaching Assistant, Institute for Theoretical Physics,University of Graz, A-8010 Austria.
Short term visiting or consulting positions (up to 1 month)
2000. Dept. Electrical Engineering, University of Nagoya, Nagoya, Japan
1996. Dept. Electrical Engineering, University of Osaka, Osaka, Japan
1992. Beckman Institute, University of Illinois, Urbana-Champaign, USA
1989. Center for Nonlinear Studies, Los Alamos National Laboratory, Los Alamos, USA
1985. Humboldt-University, Berlin, DDR
1984. Physics Inst. of Academy of Sciences in Leningrad and Vilnius, USSR
1984. Dept. Solid State Physics, University of Lund, Sweden
1983. Institute of Experimental Physics, University of Warsaw,Warsaw, Poland
1980. Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
1980. University of Warsaw, Experimental Physics, Warsaw, Poland
1980. Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
1979. Consultant to IBM at the T.J.Watson Research Center, Yorktown Heights, New York, USA
1972. International Center of Theoretical Physics, Trieste, Italy
 
TEACHING EXPERIENCE
 
1979-present: Undergraduate and graduate courses in theoretical physics of all levels
1992, 1994, 1996, 1997, 1999, 2001: Students' award of teaching excellence (best course), Physics Department, Techn. Universität München.
1979-present: Supervision of several dozen diploma and doctoral theses

Publications

Assessment of approximations in nonequilibrium Green’s function theory

Phys. Rev. B 83, 195304 (2011)

T. Kubis | P. Vogl

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Real-space multiband envelope-function approach without spurious solutions

Phys. Rev. B 84, 195122 (2011)

T. Eissfeller | P. Vogl

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Electric g tensor control and spin echo of a hole-spin qubit in a quantum dot molecule

New Journal of Physics 12 (2010) 093012

R. Roloff | T. Eissfeller | P. Vogl | W. Pötz

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Terahertz Quantum Cascade Lasers based on Type II InGaAs/GaAsSb/InP

Applied Physics Letters 97, 261110 (2010)

C. Deutsch | A. Benz | H. Detz | P. Klang | M. Nobile | A. M. Andrews | W. Schrenk | T. Kubis | P. Vogl | G. Strasser | K. Unterrainer

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The non-equilibrium Green's function method: an introduction

Journal of Computational Electronics 9, 237-242 (2010)

P. Vogl | T. Kubis

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The nonequilibrium Green's functions method and descendants: ways to avoid and to go

10.1109/IWCE.2010.5677996

P. Greck | C. Schindler | T. Kubis | P. Vogl

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Ballistic quantum transport using the contact block reduction (CBR) method

Journal of Computational Electronics 8 (3), 267-286 (2009)
DOI 10.1007/s10825-009-0293-z

S. Birner | C. Schindler | P. Greck | M. Sabathil | P. Vogl

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Electrically controllable g tensors in quantum dot molecules

Physical Review B 79, 045307 (2009)
[selected as Physical Review Editors' Suggestion; selected by David P. DiVincenzo for Virtual Journal of Quantum Information  Vol. 9, Issue 1 (Jan 2009); selected by David Awschalom for Virtual Journal of Nanoscale Science & Technology Vol. 19, Issue 4 (Jan 26, 2009); selected for a Viewpoint in Physics 2, 16 (2009)]

T. Andlauer | P. Vogl

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Full-band envelope function approach for type-II broken-gap superlattices

Physical Review B 80, 035304 (2009)

T. Andlauer | P. Vogl

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Gate control of low-temperature spin dynamics in two-dimensional hole systems

Physical Review B 80, 035325 (2009)

M. Kugler | T. Andlauer | T. Korn | A. Wagner | S. Fehringer | R. Schulz | M. Kubová | C. Gerl | D. Schuh | W. Wegscheider | P. Vogl | C. Schüller

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How periodic are terahertz quantum cascade lasers?

Journal of Physics: Conference Series 193 (2009) 012063

T. Kubis | P. Vogl

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Nonequilibrium Green's function calculation for four-level scheme terahertz quantum cascade lasers

Appl. Phys. Lett. 94, 151109 (2009)

H. Yasuda | T. Kubis | P. Vogl | N. Sekine | I. Hosako | K. Hirakawa

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Prediction of giant intrinsic spin-Hall effect in strained p-GaAs quantum wells

Journal of Physics: Conference Series 193 (2009) 012103

C. Schindler | P. Vogl

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Predictive quantum theory of current and optical emission in quantum cascade lasers

Proc. SPIE 7230, 723019 (2009)

T. Kubis | P. Vogl

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Predictive Quantum Theory of Current and Optical Gain in Quantum Cascade Lasers

Laser Physics 19, 762 (2009)

T. Kubis | P. Vogl

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Self-consistent electronic structure method for broken-gap superlattices

Proc. SPIE 7222, 722211 (2009)

T. Andlauer | T. Zibold | P. Vogl

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Theory of non-equilibrium quantum transport and energy dissipation in terahertz quantum cascade lasers

Physical Review B 79, 195323 (2009)

T. Kubis | C. Yeh | P. Vogl | A. Benz | G. Fasching | C. Deutsch

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Gauge-invariant discretization in multiband envelope function theory and g factors in nanowire dots

Physical Review B 78, 075317 (2008)

T. Andlauer | R. Morschl | P. Vogl

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Microscopic theory of spin-filtering in non-magnetic semiconductor nanostructures

phys. stat. sol. (c) 5, 290 (2008)

T. Kubis | P. Vogl

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Non-equilibrium quantum transport theory: Current and gain in quantum cascade lasers

J. Comput. Electron. 7, 432 (2008)

T. Kubis | C. Yeh | P. Vogl

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Quantum theory of transport and optical gain in quantum cascade lasers

phys. stat. sol. (c) 5, 232 (2008)

T. Kubis | C. Yeh | P. Vogl

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Simulation of quantum cascade lasers - optimizing laser performance

Photonik international 2, 60 (2008)

S. Birner | T. Kubis | P. Vogl

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Simulation zur Optimierung von Quantenkaskadenlasern

Photonik 1/2008, 44 (2008)

S. Birner | T. Kubis | P. Vogl

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Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor

J. Phys.: Conf. Ser. 107, 012002 (2008)

S. Birner | C. Uhl | M. Bayer | P. Vogl

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Electronic structure and transport for nanoscale device simulation

in: "Materials for Tomorrow. Theory, Experiments and Modelling" (Springer Series in Materials Science), ed. by S. Gemming, M. Schreiber, J.B. Suck, Springer (2007), pp 123-146

A. Trellakis | P. Vogl

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nextnano: General Purpose 3-D Simulations

IEEE Transactions on Electron Devices 54, 2137 (2007)

S. Birner | T. Zibold | T. Andlauer | T. Kubis | M. Sabathil | A. Trellakis | P. Vogl

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Self-consistent quantum transport theory: Applications and assessment of approximate models

J. Comput. Electron. 6, 183 (2007)

T. Kubis | P. Vogl

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Theory of semiconductor quantum-wire based single- and two-qubit gates

Phys. Rev. B 76, 195301 (2007)

T. Zibold | P. Vogl | A. Bertoni

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Efficient Solution of the Schrödinger-Poisson Equations in Semiconductor Device Simulations

LSSC 2005, Lecture Notes in Computer Science 3743, 602 (2006)

A. Trellakis | T. Andlauer | P. Vogl

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Modeling of semiconductor nanostructures with nextnano³

Acta Physica Polonica A 110, 111 (2006)

S. Birner | S. Hackenbuchner | M. Sabathil | G. Zandler | J. A. Majewski | T. Andlauer | T. Zibold | R. Morschl | A. Trellakis | P. Vogl

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The 3D nanometer device project nextnano: Concepts, methods, results

J. Comput. Electron. 5, 285 (2006)

A. Trellakis | T. Zibold | T. Andlauer | S. Birner | R. K. Smith | R. Morschl | P. Vogl

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Calculation of carrier transport through quantum dot molecules

AIP Conf. Proc. 722, 799 (2005)

T. Zibold | M. Sabathil | D. Mamluy | P. Vogl

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Contact block reduction method for ballistic transport and carrier densities of open nanostructures

Phys. Rev. B 71, 245321 (2005)

D. Mamaluy | D. Vasileska | M. Sabathil | T. Zibold | P. Vogl

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Embedded atom simulations of titanium systems with grain boundaries

Phys. Rev. B 71, 205409 (2005)

T. Hammerschmidt | A. Kersch | P. Vogl

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Modeling of Purely Strain-Induced CEO GaAs/In(_.16)Al(_.84)As Quantum Wires

Proc. 5th Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)

S. Birner | R. Schuster | M. Povolotskyi | P. Vogl

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Prediction of entanglement detection by I-V characteristics

Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago,USA, July 25-19, 2005, pp. 15-18, Springer Proceedings in Physics, vol. 110.

T. Zibold | P. Vogl | A. Bertoni

Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement

Proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 898-899 (2005)

R. Schuster | H. Hajak | M. Reinwald | W. Wegscheider | D. Schuh | M. Bichler | S. Birner | P. Vogl | G. Abstreiter

Self-consistent quantum transport theory of carrier capture in heterostructures

Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, vol. 110, pp. 369-372

T. Kubis | A. Trellakis | P. Vogl

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Theoretical study of electrolyte gate AlGaN/GaN field effect transistors

J. Appl. Phys. 97, 033703, (2005)

M. Bayer | C. Uhl | P. Vogl

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Advances in the theory of electronic structures of semiconductors

phys. stat. sol. (c) 1, 2003 (2004)

J. A. Majewski | S. Birner | A. Trellakis | M. Sabathil | P. Vogl

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Compact expression for the angular dependence of tight-binding Hamiltonian matrix elements

Phys. Rev. B 69, 233101 (2004)

A. V. Podolskiy | P. Vogl | Download includes Mathematica+Maple Code

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Contact block reduction method and its application to a 10 nm MOSFET device

Semicond. Sci. Technol. 19, S118 (2004)

D. Mamaluy | A. Mannargudi | D. Vasileska | M. Sabathil | P. Vogl

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Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces

Semicond. Sci. Technol. 19, S351 (2004)

M. Povolotskyi | J. Gleize | A. D. Carlo | P. Lugli | S. Birner | P. Vogl | D. Alderighi | M. Gurioli | A. Vinattieri | M. Colocci | S. Sanguinetti | R. Nötzel

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Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth

phys. stat. sol. (c) 1, 2028 (2004)

R. Schuster | H. Hajak | M. Reinwald | W. Wegscheider | G. Schedelbeck | S. Sedlmaier | M. Stopa | S. Birner | P. Vogl | J. Bauer | D. Schuh | M. Bichler | G. Abstreiter

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Prediction of a realistic quantum logic gate using the contact block reduction method

Semicond. Sci. Technol. 19, S137 (2004)

M. Sabathil | D. Mamaluy | P. Vogl

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Quantum-confined Stark shifts of charged exciton complexes in quantum dots

Phys. Rev. B 70, 201308(R) (2004)

J. J. Finley | M. Sabathil | P. Vogl | G. Abstreiter | R. Oulton | A. I. Tartakovskii | D. J. Mowbray | S. Skolnick | S. L. Liew | A. G. Cullis | M. Hopkinson

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

Physica E 21, 312-316 (2004)

D. Bougeard | P. H. Tan | M. Sabathil | P. Vogl | G. Abstreiter | K. Brunner

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Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots

Physica E 21, 199-203 (2004)

J. J. Finley | M. Sabathil | R. Oulton | A. I. Tartakovskii | D. J. Mowbray | M. S. Skolnick | S. Liew | M. Migliorato | M. Hopkinson | P. Vogl

Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces

IEEE Transactions on Nanotechnology 3, 124 (2004)

M. Povolotskyi | A. D. Carlo | P. Lugli | S. Birner | P. Vogl

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Efficient method for the calculation of ballistic quantum transport

J. Appl. Phys. 93, 4628 (2003)

D. Mamaluy | M. Sabathil | P. Vogl | Download includes Code

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Microscopic description of nanostructures grown on (N11) surfaces

Journal of Computational Electronics 2, 275 (2003)

M. Povolotskyi | J. Gleize | A. D. Carlo | P. Lugli | S. Birner | P. Vogl

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Resonant spin-orbit interactions and phonon spin relaxation rates in superlattices

in Physics of Semiconductors (Eds. A. R. Long and J. H. Davies, Institute of Physics Publ., Bristol, 2003), P305 (2002)

J. A. Majewski | P. Vogl

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Theory of vertical and lateral Stark shifts of excitons in quantum dots

phys. stat. sol. 0, 1181-1184 (2003)

M. Sabathil | S. Hackenbuchner | S. Birner | J. A. Majewski | P. Vogl | J. J. Finley

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Dielectric response of molecules in empirical tight-binding theory

Phys. Rev. B 65, 035202 (2002)

T. B. Boykin | P. Vogl

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Full-band approaches for the quantum treatment of nanometer-scale MOS structures

Physica B 314, 345-349 (2002)

F. Sacconi | M. Povolotskyi | A. D. Carlo | P. Lugli | M. Städele | C. G. Strahberger | P. Vogl

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Heterostructure field effect transistors based on nitride interfaces

J. Phys.: Condens. Matter 14, 3511 (2002)

J. A. Majewski | G. Zandler | P. Vogl

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Inter- and intra-subband LO phonon emission rates in GaAs/AlGaAs quantum disks

Physica B 314, 127-131 (2002)

N. Suzumura | M. Yamaguchi | N. Sawaki | P. Vogl

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Multiscale approaches for metal thin film growth

Computational Materials Science 24, 58-65 (2002)

P. Vogl | U. Hansen | V. Fiorentini

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Nonequilibrium band structure of nano-devices

Physica B 314, 145-149 (2002)

S. Hackenbuchner | M. Sabathil | J. A. Majewski | G. Zandler | P. Vogl | E. Beham | A. Zrenner | P. Lugli

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Resonant effect of Zener tunneling current

Phys. Rev. B 65, 233308 (2002)

M. Morifuji | T. Imai | C. Hamaguchi | A. D. Carlo | P. Vogl | G. Boehm | G. Traenkle | G. Weimann

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Self-similar optical absorption spectra in high magnetic fields

in Physics of Semiconductors (Eds. A. R. Long and J. H. Davies, Institute of Physics Publ., Bristol, 2003), E1.3 (2002)

P. Vogl | C. Strahberger

Towards fully quantum mechanical 3D device simulation

Journal of Computational Electronics 1, 81 (2002)

M. Sabathil | S. Hackenbuchner | J. A. Majewski | G. Zandler | P. Vogl

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First principles study of spin-electronics: Zero-field splitting in superlattices

in: Proc. 25th. Int. Conf. Semicond., Springer, Heidelberg, (2001)

J. A. Majewski | P. Vogl | P. Lugli

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Polarization induced 2D hole gas in GaN/AlGaN heterostructures

J. Crystal Growth 230, 607 (2001)

S. Hackenbuchner | J. A. Majewski | G. Zandler | P. Vogl

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Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures

Phys. Rev. B. 62, 7289 (2000)

C. Strahberger | P. Vogl

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Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism

J. Phys. Condensed Matter 12, 6783 (2000)

M. Moukara | M. Städele | J. A. Majewski | P. Vogl | A. Görling | Code is available, contact Peter Vogl

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Novel nitride devices based on polarization fields

phys. stat. sol. (a) 179, 285 (2000)

J. A. Majewski | G. Zandler | P. Vogl

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Atomistic modeling of large-scale metal film growth fronts

Phys. Rev. B 59, R7856 (1999)

U. Hansen | P. Vogl | V. Fiorentini

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Exact exchange Kohn-Sham formalism applied to semiconductors

Phys. Rev. B 59, 10031 (1999)

M. Städele | M. Moukara | J. A. Majewski | P. Vogl | A. Görling

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Impact of piezo- and pyroelectric fields onto transport properties and device performance in III-nitride heterostructure devices

in: Proc. of the 24th Int. Conf. on the Physics of Semiconductors, 1998, Jerusalem, Israel, Ed. D. Gershoni, World Scientific (1999), pp 1315

G. Zandler | R. Oberhuber | F. Compagnone | P. Vogl

Pyroelectronics: Novel device concepts based on nitride interfaces

J. Vac. Sci. Technol. B 17, 1617-1621 (1999)

G. Zandler | J. A. Majewski | P. Vogl

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Quasiharmonic versus exact surface free energies of al: A systematic study employing a classical interatomic potential

Phys. Rev. B 60, 5055 (1999)

U. Hansen | P. Vogl | V. Fiorentini

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Theoretical insights into CoSi2/CaF2 tunnelig diodes

Physica B 272 (1999) 160-162

C. Strahberger | P. Vogl

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Cellular automaton study of time-dynamics of avalanche breakdown in IMPATT diodes

VLSI DESIGN 8 (1-4), 93 - 98 (1998)

G. Zandler | R. Oberhuber | D. Liebig | P. Vogl | M. Saraniti | P. Lugli

Dichtefunktionaltheorie mit exaktem Austausch: Ergebnisse fuer Halbleitern

Verhandl. DPG(VI) 33, 762 (1998)

M. Staedele | M. Moukara | A. Goerling | P. Vogl

Exact Kohn-Sham exchange potential and gap problem in semiconductors

In: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II, (SIF, Bologna, 1998), pp 59

M. Staedele | J. A. Majewski | P. Vogl | A. Goerling

Hydrogen passivation of silicon surfaces: A classical molecular dynamics study

Phys. Rev. B, 13295 (1998)

U. Hansen | P. Vogl

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III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications

in: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II, (SIF, Bologna, 1998), pp 71

G. Zandler | J. A. Majewski | M. Staedele | P. Vogl | F. Compagnone

III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications

in: Advances in Computational Materials Science - II 61, 71-75 (1998), Ed. by V. Fiorentini and F. Meloni, Società Italiana di Fisica, Editrice Compositori, Bologna, Italy (1998)

G. Zandler | J. A. Majewski | M. Städele | P. Vogl | F. Compagnone

Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs

in: Proc. of the 28th European Solid State Device Research Conference, 8-10 Sept. 1998, Bordeaux, France, Eds.: A. Touboul, Y. Danto, J.-P. Klein and H. Grünbacher, Edition Frontieres, 75004 Paris - France, (1998), pp. 524 - 527

R. Oberhuber | G. Zandler | P. Vogl

Mobilty of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors

Appl. Phys. Lett. 73(6), 818-820 (1998)

R. Oberhuber | G. Zandler | P. Vogl

Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism

in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific 1998

M. Moukara | M. Städele | J. A. Majewski | P. Vogl | A. Görling

Perspektiven fuer GaN-basierende Heterostruktur- Bauelemente

Verhandl. DPG (VI) 33, 715 (1998)

F. Compagnone | G. Zandler | J. A. Majewski | M. Staedele | P. Vogl

Polarization and band offsets of stacking faults in AlN and GaN

MRS Internet J. Nitride Semicond. Res. 3, 21 (1998)

J. A. Majewski | P. Vogl

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Stability and band offsets of AlN/GaN heterostructures: Impact on device performance

Semicond. Sci. Technol. 13, A90 (1998)

J. A. Majewski | G. Zandler | P. Vogl

Stability and band offsets of AlN/GaN heterostructures: Impact on device performance

Semicond. Science Technol. 13 (8A), A90 - A92 (1998)

J. A. Majewski | G. Zandler | P. Vogl

Subband structure and mobilty of two-dimensional holes in strained Si/SiGe MOSFETs

Phys. Rev. B 58 (15), 9941-9948 (1998)

R. Oberhuber | G. Zandler | P. Vogl

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Theory of internal polarization fields in GaN and AlN interfaces and stacking fault

in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific, 1998

J. A. Majewski | P. Vogl

A Monte Carlo transport model based on spherical harmonics expansion of the valence bands

in Simulation of Semiconductor Devices and Processes, Vol. 6, Eds.: H. Ryssel and P. Pichler (Springer, Wien, 1997), p. 396-399

H. Kosina | M. Harrer | P. Vogl | S. Selberherr

Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

Mat. Res. Soc. Symp. Proc. 449, 917-922 (1997)

J. Majewski | M. Städele | P. Vogl

Enhanced Coherent Zener Tunneling in Indirect Gap Semiconductors

Phys. Stat. Sol. (b) 204, 420-423 (1997)

A. Di Carlo | P. Lugli | A. Kavokin | M. Vladimirova | P. Vogl

Enhanced Zener tunneling in Silicon

Solid State Commun. 101, 921 (1997)

A. Di Carlo | P. Lugli | P. Vogl

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Exact Kohn-Sham Exchange Potential in Semiconductors

Phys. Rev. Lett. 79, 2089 (1997)

M. Städele | J. Majewski | P. Vogl

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Prospects of Ga/In/Al-N nanometer devices: Electronic structure, scattering rates, and high field transport

Phys. Stat. Sol. (b) 204, 133 - 135 (1997)

G. Zandler | J. Majewski | M. Städele | P. Vogl | F. Compagnone

Stability and band offsets of polar GaN/SiC(001) and AlN/SiC (001) interfaces

Phys. Rev. B 56, 6911-6920 (1997)

M. Städele | J. Majewski | P. Vogl

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Stability and Band Offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures

Mat. Res. Soc. Symp. Proc. 449, 887-892 (1997)

J. Majewski | M. Städele | P. Vogl

An efficient multigrid poisson solver for device simulations

IEEE Transactions on CAD of Integrated Circuits and Systems 15, 141 (1996)

M. Saraniti | A. Rein | G. Zandler | P. Vogl | P. Lugli

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Cellular automata for device simulation - concepts and applications

in: Proc. of the 1996 Int. Conf. on Simulation of Semiconductor Processes and Devices, Tokyo, Business Center for Academic Societies Japan, Tokyo 1996, pp 39

G. Zandler | M. Saraniti | A. Rein | P. Vogl

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Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

MRS Intern. J. Nitride Semicond. Res. 1, 30 (1996)

J. A. Majewski | M. Städele | P. Vogl

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Exact exchange potential for semiconductors

in: Proc. 23rd Int. Conference on the Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996, pp 613

M. Städele | J. A. Majewski | P. Vogl | A. Görling

Generalized Kohn-Sham schemes and the band gap problem

Phys. Rev. B 53, 3764 (1996)

A. Seidl | A. Görling | P. Vogl | J. A. Majewski | M. Levy

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Microscopic analysis of intrinsic noise in semiconductor devices by the cellular automaton method

in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors, ed. by K. Hess, J. P. Leburton, and U. Ravaioli. Plenum Publishing Coop., New York - London 1996, pp 497

A. Rein | G. Zandler | M. Saraniti | P. Vogl

Optical absorbance of oriented thin films

Synth. Metals 76, Issues 1-3, 177-179, (1996)

A. Niko | F. Meghdadi | G. Leising | C. Ambrosch-Draxl | P. Vogl

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Self-interaction corrections in semiconductors

Phys. Rev. B 52, 16567 (1996)

M. Rieger | P. Vogl

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Stability and band offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures

in: Proc. 23rd Int. Conference on the Physics of Semiconductors, ed. by M. Scheffler und R. Zimmermann. World Scientific, Singapore 1996, pp 983

A. Majewski | M. Städele | P. Vogl

Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode

Physica B 227, Issues 1-4, 206-209 (1996)

H. Nagasawa | K. Murayama | M. Morifuji | A. D. Carlo | P. Vogl | G. Böhm | G. Tränkle | G. Weimann | C. Hamaguchi

Theory of electronic and optical properties of magnetoexcitons in quantum-well wires

Phys. Rev. B 54, 17003 (1996)

M. Graf | P. Vogl | A. B. Dzyubenko

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Wannier-Stark oscillations in Zener tunneling currents

Solid-State Electronics 40, 245 (1996)

H. Nagasawa | K. Murayama | M. Yamaguchi | M. Morifuji | C. Hamaguchi | A. D. Carlo | P. Vogl | G. Böhm | G. Tränkle | G. Weimann

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A relativistic self-interaction-free density functional formalism

Phys. Rev. A52, 282 (1995)

M. Rieger | P. Vogl

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Electromagnetic fields and dielectric response in empirical tight binding theory

Phys. Rev. B 51, 4940 (1995)

M. Graf | P. Vogl

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Electronic and structural properties of semiconductors with nonlocal exchange-correlation-potentials

in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 189, (1995)

A. Seidl | M. Rieger | J. A. Majewski | P. Vogl

First-principles studies of structural and optical properties of crystalline poly (para phenylene)

Phys. Rev. B51, 9668 (1995)

C. Ambrosch-Draxl | J. A. Majewski | P. Vogl | G. Leising

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Grenzflächenstabilität und elektronische Struktur von SiC/GaN-(001)-Übergittern

Verhandl. DPG (VI), 30, 1131 (1995)

M. Städele | P. Vogl

Mikroskopische Analyse des Rauschverhaltens in Bauelementen mit der Methode Zellulärer Automaten

Verhandlg. der Dt. Phys. Ges. (VI) 30, 1306, Berlin (1995)

A. Rein | G. Zandler | M. Saraniti | P. Vogl

Nanometer resolved photocurrent and local minority carrier transport in GaAs p-n junctions

in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 249 (1995)

G. Zandler | G. Kolb | K. Karrai | G. Abstreiter | P. Vogl

Optical and electronic properties of crystalline poly(para-phenylene) by first-principles calculations and experimental results

C. Ambrosch-Draxl | J. A. Majewski | P. Vogl | G. Leising | R. Abt | K. D. Aichholzer | 4. (1995)

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SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy

J. of Crystal Growth 150, 1050-1054 (1995)
(Proc. of the 8th Int. Conf. on Molecular Beam Epitaxy, Osaka, Japan, August 29 - September 2, 1994)

J. Brunner | M. Gail | G. Abstreiter | P. Vogl

SiGe quantum wells on (110) Si grown molecular beam epitaxy

J. Crystal Growth 150, 1050 (1995)

J. Brunner | M. Gail | G. Abstreiter | P. Vogl

Stability and band offsets of heterovalent SiC/GaN interfaces

Acta Physics Polonica A88, (1995)

M. Städele | J. A. Majewski | P. Vogl

Wannier-Stark localization in superlattices

Jap. J. Appl. Phys. 34, 4519 (1995)

C. Hamaguchi | M. Yamaguchi | H. Nagasawa | M. Morifuji | A. Di Carlo | P. Vogl | G. Böhm | G. Tränkle | G. Weimann | Y. Nishikawa | S. Muto

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Cellular automaton simulations of planar doped barrier field effect transistor in silicon

in: Proc. of Int. Conf. on Computational Electronics, ed. by S.M. Goodnick, Corvallis (OR) (1994) pp 7

A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl

Distribution of light emission from Hot Carriers in GaAs PIN diodes - experiments and Monte Carlo analysis

Semicond. Sci. Technol. 9, 671 (1994)

R. Ostermeier | P. Lugli | D. Liebig | F. Koch | P. Vogl | M. Poebl | W. Harth

Impact ionization and associated light emission phenomena in GaAs devices: A Monte Carlo study

in: Proc. 20th Int. Symp. on GaAs and Related Compounds, Ed. H. S. Rupprecht and G. Weimann, Institute of Physics Publishing Ltd., Bristol, Inst. Phys. Conf. Ser. No. 136, 715 (1994)

G. Zandler | A. Di Carlo | P. Vogl | P. Lugli

Light emission from ordered group-IV materials:concepts and prospects

in: Quantum Well and Superlattice Physics V (edited by G. H. Doehler, and E. S. Koteles, SPIE, Bellingham, 1994), SPIE Proc. Vol. 2139, pp 168

M. Rieger | P. Vogl | J. A. Majewski

Monte Carlo simulation of minority carrier transport and light emission phenomena in GaAs devices

Semicond. Sci. Technol. 9, 666 (1994)

G. Zandler | A. Di Carlo | P. Vogl | P. Lugli

Nanometer-resolved photocurrent and local minority carrier transport in GaAs P-N junctions

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 1. 249-252.

G. Zandler | G. Kolb | K. Karraï | G. Abstreiter | P. Vogl

Novel transport simulation of vertically grown MOSFETs by cellular automaton method

in: Proc. Int. Electron Device Meeting 1994, San Francisco, (IEEE, Piscataway, NJ, 1994), pp 351

A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl

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Theory of Zener tunneling and Stark ladders in semiconductors

Semicond. Sci. Technol. 9, 497 (1994)

A. Di Carlo | P. Vogl

Theory of Zener tunneling and Wannier-Stark states in semiconductors

Phys. Rev. B 50, 8358 (1994)

A. Di Carlo | P. Vogl | W. Pötz

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Transport simulations of ultrashort planar doped barrier field effect transistors

in: Proc. 24th European Solid State Device Research Conference, Ed.: C. Hill and P. Ashburn, Edition Frontieres, Gif-sur-Yvette Cedex - France, 1994, pp 775

A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl

A comparison of Monte Carlo and cellular automata approaches for semiconductor device simulation

IEEE Electron Device Lett. EDL 14, 77 (1993)

G. Zandler | A. Di Carlo | K. Kometer | P. Lugli | P. Vogl

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Can cellular automata methods compete with Monte Carlo semiconductor device simulations?

Proc. 23rd European Solid State Device Research Conference 1993, Eds.: J. Borel, P. Gentil, J. P. Noblanc, A. Nouailhat, M. Verdone, Edition Frontieres, Gif-sur-Yvette Cedex, France, p. 21 (1993)

G. Zandler | A. Rein | M. Saraniti | P. Vogl | P. Lugli

Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates

Phys. Rev. B 48 (19), 14276 (1993)

M. Rieger | P. Vogl

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Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates - Erratum

Phys. Rev. B 50, 8138 (1994)

M. Rieger | P. Vogl

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How to convert group-IV semiconductors into light emitters

Physica Scripta T49, 476 (1993)

P. Vogl | M. Rieger | J. A. Majewski | G. Abstreiter

How to Convert Group-IV Semiconductors into Light Emitters

Physica Scripta T49, 476-482 (1993)
(Proc. of 13th EPS, Regensburg, March 19 - April 2, 1993)

P. Vogl | M. M. Rieger | J. A. Majewski | G. Abstreiter

Properties of Sn/Ge superlattices

Semicond. Sci. Technol. 8, S6-S8 (1993)

G. Abstreiter | J. Olajos | R. Schorer | P. Vogl | W. Wegscheider

Electronic structure and optical properties of short-period ?-SnnGen superlattices

Surface Science 267, 83-86 (1992)

P. Vogl | J. Olajos | W. Wegscheider | G. Abstreiter

Infrared Optical Properties and Band Structure of *-Sn/Ge Superlattices on Ge Substrates

Phys. Rev. Lett. 67, (22), 3164-3167 (1991)

J. Olajos | P. Vogl | W. Wegscheider | G. Abstreiter

Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors

Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990.
Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688.

W. Wegscheider | K. Eberl | U. Menczigar | J. Olajos | G. Abstreiter | P. Vogl

A semi-empirical tight-binding theory of the electronic structure of semiconductors

J. Phys. Chem. Solids 44, 365-378 (1983)

P. Vogl | H. P. Hjalmarson | J. D. Dow

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Chemical Trends of Deep Impurity Levels in Covalent Semiconductors

Adv. in Solid State Physics (Festkörperprobleme) XXI (ed. by J. Treusch, Vieweg, Braunschweig, 1981), p. 191-219.

P. Vogl

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Theory of one- and two-phonon deformation potentials in semiconductors

Journal de Physique C7, 431 (1981)

P. Kocevar | K. Baumann | P. Vogl | W. Pötz

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Dynamical effective charges in semiconductors: a pseudopotential approach

J. Phys. C: Solid State Phys, Vol. 11, 1978, p. 251-262

P. Vogl

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